About
Main Research Fields
- Various III-nitride alloy (GaN, InN, AlN, BN, InGaN, AlGaN, BGaN, InAlN) epitaxy: on sapphire, Si, SiC, rare-earth oxide (heteroepitaxy), and on GaN and AlN, including semipolar and nonpolar, and Van der Waals homoepitaxy.
- Growth of electronic and photonic InGaN/GaN, AlGaN/GaN quantum structures, device design and fabrication.
- Surface functionalization, hybride junction design and application.
Researchers
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Prof. Roland Tamošiūnas Chief Researcher Saulėtekis av. 3, room B411 Phone: +370 5 2234684 |
Prof. Tadas Malinauskas Senior Researcher Saulėtekis av. 3, room B414 Phone: +370 5 2234492 |
Dr. Arūnas Kadys Senior Researcher Saulėtekis av. 3, room B413 Phone: +370 5 2234686
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Dr. Tomas Grinys Senior Researcher Saulėtekis av. 3, room B413 Phone: +370 5 2234686 |
Dr. Kazimieras Badokas Researcher Saulėtekis av. 3, room B404 Phone: +370 5 2234685
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Dr. Vitalij Bikbajev Senior engineer Saulėtekis av. 3, room kab. B410 Phone: +370 5 2234681
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Dr. Vytautas Grivickas Senior engineer Saulėtekis av. 3, room A322 Phone: +370 5 2234543 |
Facilities
Nitride technology lab (clean room)
Equipment:
- AIXTRON Ltd. CCS 3x2" metalorganinc chemical vapor deposition reactor;
- Reactive ion etching Oxford RIE - Plasmalab System100;
- Rapid thermal annealing;
- Clean room (80 m2);
- Stencil lithography;
- Fume hood;
- Distilled, deionized water station.
Laboratory supervisor: Dr. Arūnas Kadys
Semiconductor Characterization Lab
- CamScan Apollo 300 elektronic microscope with EDX (X-Max (Oxford Instr.) and EBIC (Gatan) add-ons.
- Conductive coatings deposition setup Quarum Q150T.
- Hall measurement setup Ecopia HMS-3000.
- 4-probe testing setup Jandel with RM3000.
- Mechanical polishing station Struers LaBoPol.
- Optical microscope Olympus BX51.
- Optical stereomicroscope Olympus.
- Pump-probe experimental set-up (picosecond PL2143 EKSPLA laser, optical-parametric generator PG401 EKSPLA).
- PL setup (Princeton Instr. Acton2300 monochromator with CCD camera, excitation – 405 nm cw laser or n-th harmonic of a picosecond Nd:YAG laser).
Laboratoroijos vadovas: Dr. Tomas Grinys
Projects
Ongoing:
Pažangios geometrijos nitridinių harmonikų generatorių gamyba ir tyrimas
Number: Nr. 01.2.2-LMT-K-718-01-0018
Head: R. Tomašiūnas
Duration: 2018 - 2021
Funding: 500 000 €
Agency: ES fondų investicijų veiksmų programos priemonės „Tiksliniai moksliniai tyrimai sumanios specializacijos srityje“ veiklai „Aukšto lygio tyrėjų grupių vykdomi moksliniai tyrimai“ (SMART).
III-grupės nitridų MOCVD auginimas Van der Valso epitaksijos metodu naudojant grafeną
Number: Nr. 09.3.3-LMT-K712-01-0078
Head: T.Malinauskas
Duration: 2018 - 2021
Funding: 600 000 €
Agency: ES fondų investicijų veiksmų programos 9 prioriteto „Visuomenės švietimas ir žmogiškųjų išteklių potencialo didinimas“ priemonė Nr. 09.3.3-LMT-K-712 (dotacija).
Completed:
Funkciniai neorganiniai sluoksniai naujos kartos optiniams prietaisams (FLINGO)
Number: M-ERA.NET-2/2016
Head: R. Tomašiūnas
Duration: 2016 - 2019
Funding: 100 000 €
Agency: Lietuvos Mokslo Taryba (M-ERA.NET)
Nuorodos: http://www.flingo.tmi.vu.lt/
Nepolinio GaN ant silicio auginimo technologijos panaudojant retųjų žemės element oksidų tarpsluoksnius
Number: MIP-15283
Head: T. Malinauskas
Duration: 2015 - 2017
Funding: 327 200 Lt
Agency: Lietuvos Mokslo Taryba
Nanostruktūrizuoti efektyvūs balti šviestukai sudaryti iš trumpo periodo supergardelių ir kvantinių taškų
Number: 318388
Head: R. Tomašiūnas
Duration: 2012-2016
Funding: 350 000 €
Agency: Europos komisija, EC FP7-ICT-2011-8 IP
Puslaidininkinėse ir nano-technologijose perspektyvių medžiagų kūrimas ir charakterizavimas nuostoviosios ir ultraspartčiosios spektrometrijos metodais plačioje spektrinėje srityje
Number: VP1-3.1-ŠMM-08-K-01-004/KS-120000-1756
Head: T. Grinys
Duration: 2013 - 2015
Funding: 201 277 Lt
Agency: ES socialinio vystymo fondas
Publications
2024
M.Kolenda, D.Kezys, T.Grinys, A.Vaitkevičius, A.Kadys, I.Reklaitis, V.Vaičaitis, R.Petruškevičius, R.Tomašiūnas. Green second-harmonic generation in a periodically poled planar GaN waveguide. Opt. Quant. Electron. Vol. 56, p.778, 2024.
2023
A. Kadys, J. Mickevičius, K. Badokas, S. Strumskis, E. Vanagas, Ž. Podlipskas, I. Ignatjev, and T. Malinauskas, “Epitaxial Lateral Overgrowth of GaN on a Laser‐Patterned Graphene Mask”, Nanomaterials, Vol. 13, p. 784, 2023
T.Čeponis, J.Pavlov, A.Kadys, A.Vaitkevicius, E.Gaubas. Luminescence characteristics of the MOCVD GaN structures with chemically etched surfaces. Materials Vol.16, p. 3424, 2023.
2022
K. Badokas, A. Kadys, D. Augulis, J. Mickevičius, I. Ignatjev, M. Skapas, B. Šebeka, G. Juška, and T. Malinauskas, “MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates”, Nanomaterials, Vol. 12, p. 785 (1-10), 2022
A. Strakšys, T. Kavleiskaja, R. Gruškienė, K Badokas, J. Sereikaitė, “New β‑carotene‑xylan complexes: preparation and characterization”, Cellulose, Vol. 00, p. 8705-8718, 2022
M. Kolenda, A. Kadys, T. Malinauskas, E. Radiunas, R. Ritasalo, R. Tomašiūnas, “The importance of nucleation layer for the GaN N-face purity on the annealed Al2O3 layers deposited by atomic layer deposition”, Materials Science and Engineering B, Vol. 284, p. 115850, 2022
I.Buchovec, E.Vyčaitė, K.Badokas, E.Sužiedelienė, S.Bagdonas. Application of antimicrobial photodynamic therapy for inactivation of acinetobacter baumannii biofilms. Int. Journal of Molecular Sciences Vol. 24(1), p. 722, 2022.
2021
V. Grivickas, K. Gulbinas, V. Bikbajevas, and P. Grivickas, “Photo-acoustic response and optical features of 2D-TlGaSe2 and GaAs semiconductors”, Lithuanian Journal of Physics, Vol. 61, p. 75-87, 2021
S.E. Sampayan, P.V. Grivickas, A.M. Conway, K.C. Sampayan, I. Booker, M. Bora, G.J. Caporaso, V. Grivickas, H.T. Nguyen, K. Redeckas, A. Schoner, L.F. Voss, M. Vengris, and L. Wang, “Characterization of carrier behaviour in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties”, Scientific Reports, Vol. 11, p. 6859 (1-11) 2021
K. Badokas, A. Kadys, J. Mickevičius, I. Ignatjev, M. Skapas, S. Stanionytė, E. Radiunas, G. Juška, and T. Malinauskas, “Remote epitaxy of GaN via graphene on GaN/sapphire templates”, Journal of Physics D: Applied Physics, Vol. 54, p. 205103 (1-8), 2021
E. Jelmakas, A. Kadys, M. Dmukauskas, T. Grinys, R. Tomašiūnas, D. Dobrovolskas, G. Gervinskas, S. Juodkazis, M. Talaikis, and G. Niaura “FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry”, Journal of Materials Science: Materials in Electronics, Vol. 32, p. 14532-14541, 2021
V. Novickij, R. Stanevičienė, R. Gruškienė, K. Badokas, J. Lukša, J. Sereikaitė, K. Mažeika, N. Višniakov, J. Novickij, and E. Servienė, “Inactivation of Bacteria Using Bioactive Nanoparticles and Alternating Magnetic Fields”, Nanomaterials Vol. 11, p. 342 (1-14), 2021
2020
E. Gaubas, T. Čeponis, L. Deveikis, V. Kalesinskas, G. Kreiza, T. Malinauskas, J. Pavlov, V. Rumbauskas, A. Mychko, V. Ivanov, “Study of the electrical characteristics of CdZnTe Schottky diodes”, Materials Science in Semiconductor Processing Vol. 105, p. 104705 (1-11), 2020.
M. Kolenda, D, Kežys, I. Reklaitis, E. Radiunas, R. Ritasalo, A. Kadys, T. Grinys, T. Malinauskas, S. Stanionytė, M. Skapas, R. Petruškevičius, R. Tomašiūnas, „Development of polarity inversion in a GaN waveguide structure for modal phase matching“, Journal of Materials Science, Vol. 55, p. 12008-12021, 2020.
P. Onufrijevs, P. Ščajev, A. Medvids, M. Andrulevičius, S. Nargelas, T. Malinauskas, S. Stanionytė, M. Skapas, L. Grase, A. Pludons, M. Oehme, K. Lyutovich, E. Kasper, J. Schulze, H. H. Chengg, “Direct-indirect GeSn band structure formation by laser Radiation: The enhancement of Sn solubility in Ge”, Optics and Laser Technology, Vol. 128, p. 106200 (1-7), 2020.
M. Dmukauskas, J. Mickevičius, D. Dobrovolskas, A. Kadys, S. Nargelas, G. Tamulaitis, „Correlation between growth interruption and indium segregation in InGaN MQWs“, Journal of Luminescence, Vol. 221, p. 117103, 2020.
P. Grivickas, P. Ščajev, N. Kazuchits, A. Mazanik, O. Korolik, L. F. Voss, A. M. Conway, D. Hall, M. Bora, L. Subačius, V. Bikbajevas, and V. Grivickas, “Carrier recombination parameters in diamond after surface boron implantation and annealing”, Journal of Applied Physics, Vol. 127, 245707 (1-6), 2020.
P. Ščajev, V. Soriūtė, G. Kreiza, T. Malinauskas, S. Stanionytė, P. Onufrijevs, A. Medvids, and H-H. Cheng, “Temperature dependent carrier lifetime, diffusion coefficient, and diffusion length in Ge0.95Sn0.05 epilayer”, Journal of Applied Physics, Vol. 128, p. 115103, 2020.
D.L. Hall, L.F. Voss, P. Grivickas, M. Bora, A.M. Conway, P. Ščajev, and V. Grivickas, “Photoconductive Switch With High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond”, IEEE Electron Device Letters, Vol. 41, p. 1070-1073, 2020.
S. Rasool, P. Ščajev, K. Saritha, I. Svito, K. T. Ramakrishna Reddy, M.S. Tivanov, V. Grivickas, „Determination of carrier lifetime in thermally evaporated In2S3 thin films by light induced transient grating technique“, Applied Physics A, Vol. 126, p. 312 (1-6), 2020.
I. Reklaitis, E. Radiunas, T. Malinauskas, S. Stanionytė, G. Juška, R. Ritasalo, T. Pilvi, S. Taeger, M. Strassburg, R. Tomašiūnas, „A Comparative Study on Atomic Layer Deposited Oxide Film Morphology and Their Electrical Breakdown“, Surface and Coatings Technology, Vol. 399, p. 126123 (1-15), 2020.
2019
Ž. Podlipskas, J. Jurkevičius, A. Kadys, M. Kolenda, V. Kovalevskij, D. Dobrovolskas, R. Aleksiejūnas, G. Tamulaitis, "Extreme radiation resistance in InN", Journal of Alloys and Compounds, Vol. 789, p. 48-55, 2019.
V. Grivickas, P. Ščajev, V. Bikbajevas, O.V. Korolik and A.V. Mazanik, "Carrier dynamics in highly excited TlInS2: evidence of 2D electron–hole charge separation at parallel layers", Physical Chemistry Chemical Physics, Vol. 21, p. 2102-2114, 2019.
I. Reklaitis, L. Krenčius, T. Malinauskas, S.Yu. Karpov, H. Lugauer, I. Pietzonka, M. Strassburg, P. Vitta, R. Tomašiūnas, “Time of carrier escape and recombination coefficients in InGaN quantum-well active regions of blue, cyan, and green light-emitting diodes”, Semiconductor Science and Technology, Vol. 34, p. 015007 (1-11), 2019.
A. Mekys, J. Jurkevičius, A. Kadys, M. Kolenda, V. Kovalevskij, G. Tamulaitis, “Influence of proton irradiation on carrier mobility in InN epitaxial layers”, Thin Solid Films Vol. 692, p. 137619, 2019.
J. Mickevičius, M. Andrulevičius, O. Ligor, A. Kadys, R. Tomašiūnas, G. Tamulaitis, and E.M. Pavelescu, “Type-II band alignment of low-boroncontent BGaN/GaN heterostructures”, Journal of Physics D: Applied Physics Vol. 52, p. 325105, 2019.
T. Čeponis, K. Badokas, L. Deveikis, J. Pavlov, V. Rumbauskas, V. Kovalevskij, S. Stanionytė, G. Tamulaitis, E. Gaubas, “Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation”, Sensors Vol. 19, p. 3388, 2019.
J. Mickevičius, D. Dobrovolskas, T. Malinauskas, M. Kolenda, A. Kadys, G. Tamulaitis, “Improvement of luminescence properties of InN by optimization of multi-step deposition on sapphire”, Thin Solid Films Vol. 680, p. 89-93, 2019.
R. Norkus, R. Aleksiejūnas, A. Kadys, M. Kolenda, G. Tamulaitis, and A. Krotkus, “Spectral dependence of THz emission from InN and InGaN layers”, Scientific Reports Vol. 9, p7077, 2019.
P. Ščajev, R. Aleksiejūnas, P. Baronas, Dž. Litvinas, M. Kolenda, C. Qin, T. Fujihara, T. Matsushima, C. Adachi, S. Juršėnas, “Carrier Recombination and Diffusion in Wet-Cast Tin Iodide Perovskite Layers Under High Intensity Photoexcitation”, The Journal of Physical Chemistry C Vol. 123, p 19275–19281, 2019.
P. Ščajev, Dž. Litvinas, G. Kreiza, S. Stanionytė, T. Malinauskas, R. Tomašiūnas, and S. Juršėnas, “Highly efficient nanocrystalline CsxMA1−xPbBrx perovskite layers for white light generation”, Nanotechnology Vol. 30, p. 345702 (10pp), 2019.
Ž. Podlipskas, J. Jurkevičius, A. Kadys, S. Miasojedovas, T. Malinauskas, and R. Aleksiejūnas, "The Detrimental Effect of AlGaN Barrier Quality on Carrier Dynamics in AlGaN/GaN Interface", Scientific Reports, Vol. 9, p. 17346, 2019.
P. Grivickas, K. Redeckas, K. Gulbinas, A. M. Conway, L. F. Voss, M. Bora, S. Sampayan, M. Vengris, and V. Grivickas, “Intrinsic shape of free carrier absorption spectra in 4H-SiC”, Journal of Applied Physics, Vol. 125, p. 225701, 2019.
2018
J. Mickevičius, D. Dobrovolskas, T. Steponavičius, T. Malinauskas, M. Kolenda, A. Kadys, G. Tamulaitis, „Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth“, Applied Surface Science, Vol. 427, p. 1027-1032, 2018.
R. Aleksiejūnas, Ž. Podlipskas, S. Nargelas, A. Kadys, M. Kolenda, K. Nomeika, J. Mickevičius, and G. Tamulaitis, „Direct Auger recombination and density-dependent hole diffusion in InN“, Scientific Reports, Vol. 8, p. 4621, 2018.
M.E. Kazyrevich, E.A. Streltsov, М.V. Malashchonak, A.V. Mazanik, A.I. Kulak, P. Ščajev, V. Grivickas, “Crystal stacking: A route to control photoelectrochemical behavior of BiOBr films”, Electrochimica Acta, Vol. 290, p. 63-71, 2018.
E.A. Bondarenko, E.A. Streltsov, A.V. Mazanik, A.I. Kulak, V. Grivickas, P. Ščajev and E.V. Skorb, “Bismuth oxysulfide film electrodes with giant incident photon-to-current conversion efficiency: the dynamics of properties with deposition time”, Physical Chemistry Chemical Physics, Vol. 20, p. 20340, 2018.
J. Mickevičius, T. Grinys, A. Kadys, G. Tamulaitis, “Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices”, Optical Materials, Vol. 82, p. 71-74, 2018.
J. Mickevičius, D. Dobrovolskas, J. Aleknavičius, T. Grinys, A. Kadys, G. Tamulaitis, “Spatial redistribution of photoexcited carriers in InGaN/GaN structures emitting in a wide spectral range”, Journal of Luminescence, Vol. 199, p. 379-383, 2018.
D.I. Moon, B. Kim, R. Peterson, K. Badokas, M.L. Seol, D.G. Senesky, J.W. Han, and M. Meyyappan, “A Single Input Multiple Output (SIMO) Variation-Tolerant Nanosensor”, ACS Sensors, Vol. 3, p. 1782-1788. 2018.
V. Grivickas, P. Scajev, V. Bikbajevas, O. Korolik, A. Mazanik, “Carrier dynamics in highly-excited TlInS2: Evidence of 2D electron-hole charge separation at parallel layers”, Physical Chemistry Chemical Physics, Vol. 21, p. 2102-2114, 2018.
V. Svrcek, M. Kolenda, A. Kadys, I. Reklaitis, D. Dobrovolskas, T. Malinauskas, M. Lozach, D. Mariotti, M. Strassburg, R. Tomašiūnas, „Significant carrier extraction enhancement at the interface of an InN/p-GaN heterojunction under reverse bias voltage“, Nanomaterials, Vol. 8, p 1039 (1-12), 2018.
2017
I. Reklaitis, F. Nippert, R. Kudžma, T. Malinauskas, S. Karpov, I. Pietzonka, H. J. Lugauer, M. Strassburg, P. Vitta, R. Tomašiūnas, and A. Hoffmann, “Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements”, Journal of Applied Physics, Vol. 121, p. 035701, 2017.
J. Mickevičius, D. Dobrovolskas, R. Aleksiejūnas, K. Nomeika, T. Grinys, A. Kadys, G. Tamulaitis, "Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band”, Journal of Crystal Growth, Vol. 459, p. 173-177, 2017.
T. Grinys, T. Drunga, K. Badokas, R. Dargis, A. Clark, T. Malinauskas, "Growth conditions of semi and non-polar GaN on Si with Er2O3 buffer layer", Journal of Alloys and Compounds Vol. 725, p. 739-743, 2017.
K. Nomeika, R. Aleksiejūnas, S. Miasojedovas, R. Tomašiūnas, K. Jarašiūnas, I. Pietzonka, M. Strassburg, H.-J. Lugauer, "Impact of carrier localization and diffusion on photoluminescence in highly excited cyan and green InGaN LED structures", Journal of Luminescence Vol. 188, p. 301-306, 2017.
G. Seniutinas, A. Balčytis, I. Reklaitis, F. Chen, J. Davis, Ch. David and S. Juodkazis, "Tipping solutions: emerging 3D nano-fabrication/-imaging technologies", Nanophotonics, Vol. 6, p. 923-941, 2017.
O.V. Korolik, S.A.D. Kaabi, K. Gulbinas, N.V. Mazanik, N.A. Drozdov, V. Grivickas, "Band edge photoluminescence of undoped and doped TlInS2 layered crystals", Journal of Luminescence, Vol. 187, p. 507-512.
E. Gaubas, T. Čeponis, D. Dobrovolskas, T. Malinauskas, D. Meškauskaitė, S. Miasojedovas, J. Mickevičius, J. Pavlov, V. Rumbauskas, E. Simoen and M. Zhao, "Study of recombination characteristics in MOCVD grown GaN epi-layers on Si", Semiconductor Science and Technology, Vol. 32, p. 125014 (14pp), 2017.
2016
Ž Podlipskas, R Aleksiejūnas, A Kadys, J Mickevičius, J Jurkevičius, G Tamulaitis, M Shur, M Shatalov, J Yang and R Gaska, “Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers”, Journal of Physics D: Applied Physics, Vol. 49, p. 145110, 2016.
Ž Podlipskas, R Aleksiejūnas, S. Nargelas, J Jurkevičius, J Mickevičius, A Kadys, G Tamulaitis, M Shur, M Shatalov, J Yang and R Gaska, “Photomodification of carrier lifetime and diffusivity in AlGaN epitaxial layers”, Current Applied Physics, Vol. 16, p. 633-637, 2016.
I. Buchovec, V. Lukševičiūtė, A. Marsalka, I. Reklaitis and Ž. Lukšienė, “Effective photosensitization-based inactivation of Gram (−) food pathogens and molds using the chlorophyllin–chitosan complex: towards photoactive edible coatings to preserve strawberries”, Photochemical and Photobiological Sciences, Vol. 15, p. 506-516, 2016.
E. Gaubas, T. Čeponis, E. Kuokštis, D. Meškauskaitė, J. Pavlov, I. Reklaitis, “Study of Charge Carrier Transport in GaN Sensors”, Materials, Vol. 9, p. 293 (1-14), (2016).
T. Grinys, R. Dargis, M. Frentrup, A. Kalpakovaitė-Jucevičienė, K Badokas, S. Stanionytė, A. Clark, and T. Malinauskas, “Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) 2 with rare-earth oxide interlayer”, Journal of Applied Physics, accepted, 2016.
I. Reklaitis, R. Kudžma, S. Miasojedovas, P. Vitta, A. Žukauskas, R. Tomašiūnas, I. Pietzonka, M. Strassburg „Photoluminescence decay dynamics in blue and green InGaN LED structures revealed by frequency domain technique“, Journal of Electronic Materials, Vol. 45, p. 3290-3299, 2016.
J. Jurkevičius, J. Mickevičius, A. Kadys, M. Kolenda, G. Tamulaitis, “Photoluminescence efficiency of BGaN epitaxial layers with high boron content”, Physica B, Vol. 492, p. 23-26, 2016.
J. Mickevičius, J. Jurkevičius, A. Kadys, G. Tamulaitis, M. Shur, M. Shatalov, J. Yang, and R. Gaska, “Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells”, AIP Advances, Vol. 6, p. 045212 (1-5), 2016.
V. Novickij, R. Stanevičienė, A. Grainys, J. Lukša, K. Badokas, T. Krivorotova, J. Sereikaitė, J. Novickij, E. Servienė, “Electroporation-assisted inactivation of Escherichia coli using nisin-loaded pectin nanoparticles”, Innovative Food Science and Emerging Technologies, Vol. 38, p. 98-104, 2016.
M. Dmukauskas, A Kadys, T. Malinauskas, T. Grinys, I. Reklaitis, K. Badokas, M. Skapas, R. Tomašiūnas, D. Dobrovolskas, S. Stanionytė, I. Pietzonka, M. Strassburg, and H-J Lugauer, “Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells”, Journal of Physics D: Applied Physics, Vol. 49, p. 202101 (1-7), 2016.
J. Juodkazytė, Gė Seniutinas, B. Šebeka, I. Savickaja, T. Malinauskas, K. Badokas, K. Juodkazis, S. Juodkazis, “Solar water splitting: Efficiency discussion”, International Journal of Hydrogen Energy, Vol. 41, p. 11941-11948, 2016.
2015
K. Aponienė, E. Paškveičiūtė, I. Reklaitis, Ž. Lukšienė, “Reduction of microbial contamination of fruits and vegetables by hypericin-based photosensitization: comparison with other emerging antimicrobial treatments”, Journal of Food Engineering, Vol. 144, p. 29-35, 2015.
T. Grinys, R. Dargis, A. Kalpakovaitė, S. Stanionytė, A. Clark, F.E. Arkun, I. Reklaitis, R. Tomašiūnas, „GaN growth on Si with rare-earth oxide distributed Bragg reflector structures“, Journal of Crystal Growth, Vol. 424, p. 28-32, 2015.
A. Kadys, T. Malinauskas, T. Grinys, M. Dmukauskas, J. Mickevičius, J. Aleknavičius, R. Tomašiūnas, A. Selskis, R. Kondrotas, S. Stanionytė, H. Lugauer, M. Strassburg, “Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition” Journal of Electronic Materials, Vol. 44, p. 188-193, 2015.
R. Aleksiejūnas, K. Nomeika, S. Miasojedovas, S. Nargelas, T. Malinauskas, K. Jarašiūnas, Ö. Tuna, and M. Heuken, “Carrier dynamics in blue and green emitting InGaN MQWs”, Physica Status Solidi B: Basic Solid State Physics, Vol. 252, p. 977-982, 2015.
S.S. Suvanam, K. Gulbinas, M. Usman, M.K. Linnarson, D.M. Martin, J. Linnros, V. Grivickas, and A. Hallen, “4H-polytype of silicon carbide-dielectric interface recombination analysis using free carrier absorption”, Journal of Applied Physics, Vol. 117, p. 105309, 2015.
T. Malinauskas, A. Kadys, S. Stanionytė, K. Badokas, J. Mickevičius, J. Jurkevičius, D. Dobrovolskas, and G. Tamulaitis, “Growth of BGaN epitaxial layers using close coupled showerhead MOCVD”, Physica Status Solidi B: Basic Solid State Physics, Vol. 252, p. 1138-1141, 2015.
I. Reklaitis, T. Grinys, R. Tomašiūnas, T. Puodžiūnas, L. Mažulė, V. Sirutkaitis, C.H. Lin, C.C.Yang, “A new geometrical approach for rapid LED processing by using femtosecond laser”, Optics and Lasers in Engineering, Vol. 74, p. 17–21, 2015.
J. Mickevičius, J. Jurkevičius, A. Kadys, G. Tamulaitis, M. Shur, M. Shatalov, J. Yang and R Gaska, “Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers”, Journal of Physics D: Applied Physics, Vol. 48, p. 275105 (5), 2015.
E. Jelmakas, A. Kadys, T. Malinauskas, D. Paipulas, D. Dobrovolskas, M. Dmukauskas, A. Selskis, S. Juodkazis and R. Tomašiūnas, “A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser”, Journal of Physics D: Applied Physics, Vol. 48, p. 285104 (9), 2015.
K. Nomeika, M. Dmukauskas, R. Aleksiejūnas, P. Ščajev, S. Miasojedovas, A. Kadys, S. Nargelas and K. Jarašiūnas, “Enhancement of quantum efficiency in InGaN quantum wells by using superlattice interlayers and pulsed growth”, Lithuanian Journal of Physics, Vol. 55, p. 255-263, 2015.
P. Ščajev, T. Malinauskas, G. Seniutinas, M. D. Arnold, A. Gentle, I. Aharonovich, G. Gervinskas, P. Michaux, J.S. Hartley, E.L. H. Mayes, P.R. Stoddart, and S. Juodkazis, “Light-induced reflectivity transients in black-Si nanoneedles”, Solar Energy Materials and Solar Cells, Vol. 144, p. 221-227, 2015.
J. Mickevičius, Ž. Podlipskas, R. Aleksiejūnas, A. Kadys, J. Jurkevičius, G. Tamulaitis, M.S. Shur, M. Shatalov, J. Yang, and R. Gaska, “Nonradiative recombination, carrier localization, and emission efficiency of AlGaN epilayers with different Al content”, Journal of Electronic Materials, Vol. 44, p. 4706-4709, 2015.
A. Kadys, J. Mickevičius, T. Malinauskas, J. Jurkevičius, M. Kolenda, S. Stanionytė, D. Dobrovolskas and G. Tamulaitis, “Optical and structural properties of BGaN layers grown on different substrates”, Journal of Physics D: Applied Physics, Vol. 48, p. 465307(6p), 2015.
J. Pavlov, T. Čeponis, E. Gaubas, D. Meškauskaitė, I. Reklaitis, J. Vaitkus, R. Grigonis and V. Sirutkaitis, “Comparative study of deep levels in HVPE and MOCVD GaN by combining O-DLTS and pulsed photo-ionization spectroscopy”, Journal of Instrumentation, Vol. 10, p. C12015, 2015.