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Dr. Vytautas Grivickas Phone: +370 614 45 311
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| Institute / Center |
Institute of Photonics and Nanotechnology (IPN) |
| Research Area | Semiconductor physics, Materials science |
| Present position |
engineer, senior researcher |
| Scientific Interests, Keywords | Carrier recombination, transport and optical aspects of wide band gap semiconductor materials (Si, SiC, Si nano str., layered chalcogenides, diamond, AlN, Ga2O3) |
| Links to External Profile | ORCID: 0000-0001-8234-121X |
| Most important publications |
1. 166. S.E. Sampayan, P.V. Grivickas, A.M. Conway, K.C. Sampayan, I. Booker, M. Bora, G.J. Caporaso, V. Grivickas, H.T. Nguyen, K. Redeckas, A. Schoner, L.F. Voss, M. Vengris and L. Wang, Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties, Scientific Reports 11:6859 (2021), doi.org/10.1038/s41598-021-85275. 2. 165. V. Grivickas, K. Gulbinas, V. Bikbajevas and P. Grivickas, Photo-acoustic response and optical features of 2D-TlGaSe2 and GaAs semiconductors, Lithuan. J. Phys. 61, No2, 75-87 (2021). 3. 164. P. Grivickas, P. Ščajev, N. Kazuchits, S. Lastovskii, L. F. Voss, A. M. Conway, A. Mazanik, O. Korolik, V. Bikbajevas, and V. Grivickas, Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing, Appl. Phys. Lett. 117, 242103-6 (2020). 4. 163. D.L. Hall , L.F. Voss, P. Grivickas, M. Bora , A.M. Conway, P. Ščajev, and V. Grivickas, Photoconductive Switch With High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond, IEEE Electron Device Letters, 41, 1070-1073 (2020). 5. 162. P. Grivickas, P. Ščajev, N. Kazuchits, A. Mazanik, O. Korolik, L. F. Voss, A. M. Conway, D. Hall, M. Bora, L. Subačius, V. Bikbajevas and V. Grivickas, Carrier Recombination Changes in Diamond after Surface B-Implantation, J. Appl. Phys. 127, 245707-6 (2020). 6. 160. P. Grivickas, K. Redeckas, K. Gulbinas, A. M. Conway, L. Voss, M. Bora, S. Sampayan, M. Vengris, and V. Grivickas, Intrinsic Shape of Free Carrier Absorption Spectra in 4H-SiC, Appl. Phys. Lett. 125 (2019) 225701-4, DOI.org./10.1063/1.5095161. 7. 159. V. Grivickas, P. Ščajev, V. Bikbajevas, O. V. Korolik, A. V. Mazanik, Carrier dynamics in highly-excited TlInS2: Evidence of 2D electron-hole charge separation at parallel layers, Phys. Chem. Chem. Phys, 21 (2019), 2102-2114 (and Suppl. 1-6) , DOI: 10.1039/C8CP06209A. 8. 155. S. S. Suvanam, K. Gulbinas, M. Usman, M. K. Linnarson, D. M. Martin, J.Linnros, V. Grivickas, A. Hallén. 4H-SiC-Dielectric Interface Recombination Analysis Using Free Carrier Absorption,. J. Appl. Phys. 117 (2015) 105309. 9. 142. V. Grivickas and J. Linnros „Carrier Lifetime: Free Carrier Absorption, Photoconductivity and Photoluminescence“ Chapter in the book „Characterization of Materials“ Second Ed. 3 volums 2012, John Viley & Sons, Inc., Ed. E.N. Kaufmann, Vol. 1, pp. 658-692. 10. 116. P. Grivickas, V. Grivickas, and J. Linnros, Excitonic absorption above the Mott transition in Si, Phys. Rev. Lett. 91 (2003) 246401-4. |
| Project and/or Grant leadership |
Characterization of materials for UWBGLEAP: Ultra-Wide Bandgap Laser Addressable Photoconductors |
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Supervision of Doctoral Students and/or Postdoc Students
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Supervisor assistant and consultant of doctoral students |
| Expertise | Vice-president of Lithuanian Materials Research Society LtMRS |
| Science popularization: scientific and educational activities | History notes of Lithuanian Materials Science (in Lithuanian), "Technologia" Kaunas 2011. |