Dr. Darius Dobrovolskas
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Institute / Center |
Institute of Photonics and Nanotechnology (IPN) |
Research Area |
Semiconsuctor photonics |
Present position |
Research scientist |
Scientific Interests, Keywords |
Optical characterization of semiconductors and their structures; III-nitrides; photoluminescence; confocal microscopy; AFM; SNOM |
Links to External Profile | |
Most important publications |
D. Dobrovolskas, J. Mickevičius, G. Tamulaitis, V. Reipa, Photoluminescence of Si nanocrystals under selective excitation, Journal of Physics and Chemistry of Solids, 70, 439-443 (2009) D. Dobrovolskas, J. Mickevičius, E. Kuokštis, G. Tamulaitis, M. Shur, M. Shatalov, J. Yang, R. Gaska, Confocal spectroscopy of InGaN LED structures, Journal of Physics D-Applied Physics, 44, 135104 (2011) T. Malinauskas, A. Kadys, S. Stanionytė, K. Badokas, J. Mickevičius, J. Jurkevičius, D. Dobrovolskas, and G. Tamulaitis, Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD, Phys. Status Solidi B 252, 1138-1141 (2015) D. Dobrovolskas, S. Arakawa, S. Mouri, T. Araki, Y. Nanishi, J. Mickevičius, and G. Tamulaitis, Enhancement of InN Luminescence by Introduction of Graphene Interlayer, Nanomaterials 9, 417 (2019) Darius Dobrovolskas, Arūnas Kadys, Alexander Usikov, Tadas Malinauskas, Kazimieras Badokas, Ilja Ignatjev, Sergey Lebedev, Alexander Lebedev, Yuri Makarov, Gintautas Tamulaitis, Luminescence of structured InN deposited on graphene interlayer, Journal of Luminescence 232, 117878 (2021) |