Dr. Jevgenij Pavlov

Dr. Jevgenij Pavlov

Phone: +370 522 34 468

E-mail: 

Institute of Photonics and Nanotechnology (IPN)

Technological Science, Material Engineering

Researcher

Study of the recombination processes in modern electronic devices; Study of carrier transport phenomena; Study of radiation nanoclusters; Search of radiation hard materials and development of radiation tolerant structures; Engineering of radiation defects and radiation technologies for production of electronic devices;

1. Pavlov, J.; Ceponis, T.; Pukas, K.; Makarenko, L.; Gaubas, E. 5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1-xGex Alloys. Materials 2022, 15, 1861.
2. Ceponis, T.; Lastovskii, S.; Makarenko, L.; Pavlov, J.; Pukas, K.; Gaubas, E. Study of Radiation-Induced Defects in p-Type Si1-xGex Diodes before and after Annealing. Materials 2021, 13, 5684.
3. Ceponis, T.; Deveikis, L.; Lastovskii, S.; Makarenko, L.; Pavlov, J.; Pukas, K.; Rumbauskas, V.; Gaubas, E. Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors. Sensors 2021, 10, 6884.
4. Heikkinen, T.; Pavlov, J.; Ceponis, T.; Gaubas, E.; Zajac, M.; Tuomisto, F. Effect of Mn and Mg dopants on vacancy defect formation in ammonothermal GaN. J. Crys. Growth. 2020, 547, 125803.
5. Gaubas, E.; Ceponis, T.; Deveikis, L.; Kalesinskas, V.; Kreiza, G.; Malinauskas, T.; Pavlov, J.; Rumbauskas, V.; Mychko, A.; Ivanov, V. Study of the electrical characteristics of CdZnTe Schottky diodes. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 2020, 105, 104705.
6. Pavlov, J.; Ceponis, T.; Deveikis, L.; Rumbauskas, V.; Tamulaitis, G.; Gaubas, E.; Modification of characteristics of AlGaN photodiodes by 1.6 MeV proton irradiation. JINST 2020, 15, C01026.
7. Gaubas, E.; Ceponis, T.; Deveikis, L.; Dobrovolskas, D.; Kalesinskas, V.; Pavlov, J.; Rumbauskas, V.; Mychko, A. Spectroscopy of defects in CdZnTe structures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2019, 34, 115012.
8. Ceponis, T.; Badokas, K.; Deveikis, L.; Pavlov, J.; Rumbauskas, V.; Kovalevskij, V.; Stanionyte, S.; Tamulaitis, G.; Gaubas, E. Evolution of Scintillation and Electrical Characteristics of AlGaN Double-Response Sensors During Proton Irradiation. Sensors 2019, 19, 3388.
9. Makarenko, LF.; Lastovski, SB.; Yakushevich, HS.; Gaubas, E.; Pavlov, J.; Kozlovski, VV.; Moll, M.; Pintilie, I. Formation of a Bistable Interstitial Complex in Irradiated p-Type Silicon. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 2019, 219, 1900354.
10. Gaubas, E.; Ceponis, T.; Meskauskaite, D.; Mickevicius, J.; Pavlov, J.; Rumbauskas, V.; Grigonis, R.; Zajac, M.; Kucharski, R. Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN. SCIENTIFIC REPORTS 2019, 9, 1473.

In 2017. Winner of the LMA Young Scientists and Doctoral Students Award for the best research papers for work "Detector structures on defect-rich silicon and fast-response wide-gap semiconductor materials"

"Dvigubo atsako AlGaN radiacijos detektoriai naujos kartos dalelių greitintuvams" http://www.technologijos.lt/