Scientific Interests, Keywords |
Various III-nitride alloy (GaN, InN, AlN, BN, InGaN, AlGaN, BGaN, InAlN) epitaxy on sapphire, Si, SiC, rare-earth oxide (heteroepitaxy), and on GaN and AlN, including semipolar and nonpolar, and Van der Waals homoepitaxy. Growth of electronic and photonic InGaN/GaN, AlGaN/GaN quantum structures.
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Most important publications |
- K. Badokas, A. Kadys, D. Augulis, J. Mickevičius, I. Ignatjev, M. Skapas, B. Šebeka, G. Juška, and T. Malinauskas, “MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates”, Nanomaterials, Vol. 12, p. 785 (1-10), 2022 https://doi.org/10.3390/nano12050785
- K. Badokas, A. Kadys, J. Mickevičius, I. Ignatjev, M. Skapas, S. Stanionytė, E. Radiunas, G. Juška, and T. Malinauskas, “Remote epitaxy of GaN via graphene on GaN/sapphire templates”, Journal of Physics D: Applied Physics, Vol. 54, p. 205103 (1-8), 2021 https://doi.org/10.1088/1361-6463/abe500
- M. Kolenda, D, Kežys, I. Reklaitis, E. Radiunas, R. Ritasalo, A. Kadys, T. Grinys, T. Malinauskas, S. Stanionytė, M. Skapas, R. Petruškevičius, R. Tomašiūnas, „Development of polarity inversion in a GaN waveguide structure for modal phase matching“, Journal of Materials Science, Vol. 55, p. 12008-12021, 2020 https://doi.org/10.1007/s10853-020-04831-z
- Ž. Podlipskas, J. Jurkevičius, A. Kadys, M. Kolenda, V. Kovalevskij, D. Dobrovolskas, R. Aleksiejūnas, G. Tamulaitis, "Extreme radiation resistance in InN", Journal of Alloys and Compounds, Vol. 789, p. 48-55, 2019 https://doi.org/10.1016/j.jallcom.2019.03.108
- J. Mickevičius, D. Dobrovolskas, T. Malinauskas, M. Kolenda, A. Kadys, G. Tamulaitis, “Improvement of luminescence properties of InN by optimization of multi-step deposition on sapphire”, Thin Solid Films Vol. 680, p. 89-93, 2019 https://doi.org/10.1016/j.tsf.2019.04.032
- Ž. Podlipskas, J. Jurkevičius, A. Kadys, S. Miasojedovas, T. Malinauskas, and R. Aleksiejūnas, "The Detrimental Effect of AlGaN Barrier Quality on Carrier Dynamics in AlGaN/GaN Interface", Scientific Reports, Vol. 9, p. 17346, 2019 https://doi.org/10.1038/s41598-019-53732-y
- V. Svrcek, M. Kolenda, A. Kadys, I. Reklaitis, D. Dobrovolskas, T. Malinauskas, M. Lozach, D. Mariotti, M. Strassburg, and R. Tomašiunas, “Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage”, Nanomaterials, Vol. 8, No. 12, p. 1039 (1-12), 2018 https://doi.org/10.3390/nano8121039
- A. Kadys, J. Mickevičius, T. Malinauskas, J. Jurkevičius, M. Kolenda, S. Stanionytė, D. Dobrovolskas and G. Tamulaitis, “Optical and structural properties of BGaN layers grown on different substrates”, Journal of Physics D: Applied Physics, Vol. 48, p. 465307(6p), 2015 https://iopscience.iop.org/article/10.1088/0022-3727/48/46/465307
- A. Kadys, T. Malinauskas, T. Grinys, M. Dmukauskas, J. Mickevičius, J. Aleknavičius, R. Tomašiūnas, A. Selskis, R. Kondrotas, S. Stanionytė, H. Lugauer, M. Strassburg, “Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition” Journal of Electronic Materials, Vol. 44, p. 188-193, 2015 https://link.springer.com/article/10.1007/s11664-014-3494-6
- J. Juodkazytė, B. Šebeka, I. Savickaja, A. Kadys, E. Jelmakas, T, Grinys, S. Juodkazis, K. Juodkazis, T. Malinauskas „InxGa1xN performance as a band-gap-tunable photo-electrode in acidic and basic solutions“, Solar energy materials & Solar cells 130, 36-41 2014. https://doi.org/10.1016/j.solmat.2014.06.033
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