Dr. Laimonas Deveikis

Dr. Laimonas Deveikis

E-mail: 

Institute of Photonics and Nanotechnology (IPN)

Natural Sciences, Physics

Research fellow

Carrier transport, capture, recombination/ generation in crystal and amorphous materials, evolution of radiation defects in semiconductors, materials engineering, development of contact and contactless characterization techniques. Characterization of radiation sensors, development of dosimetry systems for high energy physics experiments and for medical applications.

https://orcid.org/0000-0002-3112-4140

1. E. Gaubas, T. Ceponis, L. Deveikis, D. Meskauskaite, J. Pavlov, V. Rumbauskas, J. Vaitkus, M. Moll, F. Ravotti, Anneal induced transformations of defects in hadron irradiated Si wafers and Schottky diodes, Mat. Sc. Sem. Proc. 75 (2018) 157–165.
2. E. Gaubas, P. Baronas, T. Čeponis, L. Deveikis, D. Dobrovolskas, E. Kuokstis, J. Mickevičius, V. Rumbauskas, M. Bockowski, M. Iwinska, T. Sochacki, Study of spectral and recombination characteristics of HVPE GaN grown on ammono substrates, Mat. Sc. Semicond. Process. 91 (2019) 341–355.
3. E. Gaubas, T. Čeponis, L. Deveikis, D. Dobrovolskas, V. Rumbauskas, M. Viliunas, Room-temperature infrared photoluminescence in GaN doped with various impurities, Optical Materials 94 (2019) 266–271.
4. T. Ceponis, K. Badokas, L. Deveikis, J. Pavlov, V. Rumbauskas, V. Kovalevskij, S. Stanionyte, G. Tamulaitis, E. Gaubas, Evolution of scintillation and electrical characteristics of AlGaN double-response sensors during proton irradiation, Sensors 19 (2019) 3388.
5. E. Gaubas, T. Ceponis, L. Deveikis, V. Kalesinskas, G. Kreiza, T. Malinauskas, J. Pavlov, V. Rumbauskas, A. Mychko, V. Ivanov, Study of the electrical characteristics of CdZnTe Schottky diodes, Mat. Sc. Semicond. Process. 105 (2020) 104705.
6. T. Ceponis, L. Deveikis, S. Lastovskii, L. Makarenko, J. Pavlov, K. Pukas, V. Rumbauskas, E. Gaubas, Transient electrical and optical characteristics of electron and proton irradiated SiGe detectors, Sensors 20 (2020) 6884.