| Scientific Interests, Keywords |
Carrier transport, capture, recombination/generation in crystal and amorphous materials, evolution of radiation defects in semiconductor materials, materials engineering, development of contact and contactless characterization techniques. Study of radiation sensors, development of dosimetry systems for high energy physics experiments and for medical application.
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| Most important publications |
- T. Ceponis, L. Deveikis, S. Lastovskii, L. Makarenko, J. Pavlov, K. Pukas, V. Rumbauskas, E. Gaubas, Transient electrical and optical characteristics of electron and proton irradiated SiGe detectors, Sensors 20 (2020) 6884.
- J. Pavlov, T. Ceponis, L. Deveikis, V. Rumbauskas, G. Tamulaitis, E. Gaubas, Modification of characteristics of AlGaN photodiodes by 1.6 MeV proton irradiation, J. Instrum. 15 (2020) C01026.
- E. Gaubas, T. Ceponis, L. Deveikis, D. Dobrovolskas, V. Kalesinskas, J. Pavlov, V. Rumbauskas, A. Mychko, Spectroscopy of defects in CdZnTe structures, Semicond. Sci. Technol. 34 (2019) 115012.
- T. Ceponis, K. Badokas, L. Deveikis, J. Pavlov, V. Rumbauskas, V. Kovalevskij, S. Stanionyte, G. Tamulaitis, E. Gaubas, Evolution of scintillation and electrical characteristics of AlGaN double-response sensors during proton irradiation, Sensors 19 (2019) 3388.
- E. Gaubas, T. Čeponis, D. Meškauskaite, J. Mickevičius, J. Pavlov, V. Rumbauskas, R. Grigonis, M. Zajac, R. Kucharski, Pulsed photo-ionization spectroscopy of traps in as-grown and neutron irradiated ammonothermally synthesized GaN, Scientific Reports 9 (2019) 1473. DOI : 10.1038/s41598-018-38138-6.
- E. Gaubas, T. Ceponis, J. Mickevicius, J. Pavlov, V. Rumbauskas, M. Velicka, E. Simoen, m. Zhao, Pulsed photo-ionization spectroscopy in carbon doped MOCVD GaN epi-layers on Si, Semicond. Sci. Technol. 33 (2018) 7.
- V. Rumbauskas, D. Meskauskaite, T. Ceponis, E. Gaubas, Anneal induced transforms of radiation defects in heavily electron irradiated Si diodes, J. Instrum. 11 (2016) P09004.
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