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Dr. Žydrūnas Podlipskas
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| Institute / Center |
Institute of Photonics and Nanotechnology (IPN) |
| Research Area |
Semiconductor physics |
| Present position |
Research fellow |
| Scientific Interests, Keywords |
Cathodoluminescence-SEM microscopy, Time-resolved characterisation, Nitrides, Semiconductor defects, Computational approaches in image post-processing |
| Most important publications |
*Nomeika, K., et al. Impact of carrier diffusion on the internal quantum efficiency of InGaN quantum well structures. Journal of Materials Chemistry C 10.5, 1735-1745 (2022). https://doi.org/10.1039/D1TC04760D *Podlipskas, Ž., et al. The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface. Scientific reports 9, 1-8 (2019). https://doi.org/10.1038/s41598-019-53732-y *Podlipskas, Ž., et al. Extreme radiation resistance in InN. Journal of Alloys and Compounds 789, 48–55 (2019). https://doi.org/10.1016/j.jallcom.2019.03.108 *Aleksiejūnas, R., et al. Direct Auger recombination and density-dependent hole diffusion in InN. Scientific Reports 8, 4621 (2018). https://doi.org/10.1038/s41598-018-22832-6 *Podlipskas, Ž., et al. Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers. Journal of Physics D: Applied Physics 49, 145110 (2016). https://doi.org/10.1088/0022-3727/49/14/145110 |