Dr. Irmantas Kašalynas

Dr. Irmantas Kašalynas

Phone: +370 618 57 423

E-mail: 

LinkedIn: https://www.linkedin.com/in/irmantas-kasalynas-13a4874/

Institute of Applied Electrodynamics and Telecommunications (IAET)

Professor

THz science and technology, semiconductor physics.

https://orcid.org/0000-0003-1256-9424

2022 publications:

1) RM Balagula et al. "Space-charge domains in n-type GaN epilayers under pulsed electric field" Applied Physics Letters 121 (10), 102101 (2022)

2) D Pashnev et al. "Investigation of Electron Effective Mass in AlGaN/GaN Heterostructures by THz Spectroscopy of Drude Conductivity" IEEE Transactions on Electron Devices (2022)

3) RM Balagula et al. "High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate" Materials 15 (6), 2066 (2022)

4) J Jorudas et al. "Development of quaternary InAlGaN barrier layer for high electron mobility transistor structures" Materials 15 (3), 1118 (2022).

A detailed list of publications can be found here:https://scholar.google.com/citations?hl=lt&user=XO3jFkkAAAAJ&view_op=list_works&sortby=pubdate

Leader: Terahertz Plasma Wave Instabilities in GaN/AlGaN Nanowires (TERAGANWIRE); Electrically driven sources of terahertz radiation based on transit-time resonance effect in GaN and GaO semiconductor compounds; Terahertz Photonics for Communications, Space, Security, Radio-Astronomy, and Material Science (TERAOPTICS ) Hybrid Plasmonic Components for THz range (T-HP).

More information on the projects managed can be found here:https://www.researchgate.net/profile/Irmantas-Kasalynas/projects

dr. Justinas Jorudas

dr. Daniil Pashnev

dr. Surya Revanth Ayyagari

post-dr. Roman Balagula

Applied THz Physics

Subject headings for the autumn semester 2022/2023:

1) Skirtingo laidumo kontaktų ant AlGaN/GaN heterostruktūrų panaudojimas peteliškės tipo THz jutikliuose. // Employing contacts of different conductivity on AlGaN/GaN heterostructures in bow-tie type THz sensors. 2) Silpnai legiruotų GaN plėvelių taikymai THz diapazone. // Applications of lightly doped GaN films in the THz range. 3) Antenomis susietų AlGaN/GaN didelio elektronų judrio tranzistorių taikymai THz dažnio bangoms detektuoti. // Applications of antenna-coupled AlGaN/GaN high electron mobility transistors for detection of THz frequency waves.

Participation in the national/international governing bodies, commissions, committees, boards etc.

Member of the doctoral committee of the field of materials engineering in the field of technological sciences.

https://www.researchgate.net/lab/THz-photonics-lab-Irmantas-Kasalynas