| Most important publications |
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K.Badokas, A.Kadys, D.Augulis, J.Mickevičius, I.Ignatjev, M.Skapas, B.Šebeka, G.Juška, and T.Malinauskas, MOVPE growth of GaN via graphene layers on GaN/sapphire templates, Nanomaterials 12, 785 (2022).
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S.Nargelas, J.Mickevičius, A.Kadys, K.Jarašiūnas, T.Malinauskas, Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics, Optics & Laser Technology 134, 106624 (2021).
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M.Dmukauskas, J.Mickevičius, D.Dobrovolskas, A.Kadys, S.Nargelas, G.Tamulaitis, Correlation between growth interruption and indium segregation in InGaN MQWs, Journal of Luminescence 221, 117103 (2020).
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O.Kravcov, J.Mickevičius, and G.Tamulaitis, Kinetic Monte Carlo simulations of the dynamics of a coupled system of free and localized carriers in AlGaN, Journal of Physics: Condensed Matter 32, 145901 (2020).
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J.Mickevičius, D.Dobrovolskas, J.Aleknavičius, T.Grinys, A.Kadys, and G.Tamulaitis, Spatial redistribution of photoexcited carriers in InGaN/GaN structures emitting in a wide spectral range, Journal of Luminescence 199, 379 (2018).
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A.Kadys, J.Mickevičius, T.Malinauskas, J.Jurkevičius, M.Kolenda, S.Stanionytė, D.Dobrovolskas, and G.Tamulaitis, Optical and structural properties of BGaN layers grown on different substrates, Journal of Physics D: Applied Physics 48, 465307 (2015).
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J.Mickevičius, J.Jurkevičius, K.Kazlauskas, A.Žukauskas, G.Tamulaitis, M.S.Shur, M.Shatalov, J.Yang, and R.Gaska, „Stimulated emission in AlGaN/AlGaN quantum wells with different Al content“, Applied Physics Letters 100, 081902 (2012).
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K. Kazlauskas, G. Tamulaitis, J. Mickevičius, E. Kuokštis, A. Žukauskas, Y.-C. Cheng, H.-C. Wang, C.-F. Huang, C.C. Yang, Excitation power dynamics of photoluminescence in InGaN/GaN quantum wells with enhanced carrier localization, Journal of Applied Physics 97, 013525 (2005).
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