Dr. Kęstutis Ikamas

Dr. Kęstutis Ikamas

Phone: +370 522 34 586

E-mail: 

Institute of Applied Electrodynamics and Telecommunications (IAET)

Electronic engineering and Semiconductor physics

Senior researcher

https://orcid.org/0000-0002-2165-3866

https://publons.com/researcher/AAP-4174-2020/

1. K. Ikamas, D. Cibiraitė, A. Lisauskas, M. Bauer, V. Krozer, and H. G. Roskos, “Terahertz Power Detectors based on 90-nm Silicon CMOS Transistors with over Six Octaves Flat Responsivity,” IEEE Electron Device Letters, vol. 39, no. 9, p. 1413–1416, Sep. 2018. DOI: 10.1109/LED.2018.2859300
2. M. Bauer, A. Ramer, S. Chevtchenko, K. Osipov, D. Čibiraitė, S. Pralgauskaitė, K. Ikamas, et. al., “A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna”, IEEE Transactions on Terahertz Science and Technology 9, 430–444, 2019. DOI: 10.1109/TTHZ.2019.2917782
3. A. Lisauskas, K. Ikamas, S. Massabeau, M. Bauer, D. Cibiraitė, J. Matukas, J. Mangeney, M. Mittendorff, S. Winnerl, V. Krozer, and H. G. Roskos, “Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertc pulses,” APL Photonics, vol. 3, no. 5, p. 051705, Mar. 2018. DOI: 10.1063/1.5011392
4. J. Zdanevicius et al., “Field-effect transistor-based detectors for power monitoring of THz quantum cascade lasers,” IEEE Transactions on Terahertz Science and Technology 8, no. 6, 613–21, Nov. 2018. DOI: 10.1109/TTHZ.2018.2871360
5. K. Ikamas, I. Nevinskas, A. Krotkus, and A. Lisauskas, “Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators,” Sensors, vol. 18, no. 11, p. 3735, Nov. 2018. DOI: 10.3390/s18113735
6. K. Ikamas, D.B. But, A. Cesiul, C. Kołaciński, T. Lisauskas, W. Knap, A. Lisauskas, “All-Electronic Emitter-Detector Pairs for 250 GHz in Silicon”. MDPI Sensors, 21(17), 5795, 2021. DOI: 10.3390/s21175795
7. E. Javadi, D.B. But, K. Ikamas, J. Zdanevičius, W. Knap, and A. Lisauskas, „Sensitivity of field-effect-transistor-based terahertz detectors“, MDPI Sensors, 21(9), 2909, 2021. DOI: 10.3390/s21092909

2019-2020: project leader of Agency for Science, Innovation and Technology national research project No. TPP-03-045 „Point-to-point all-electronic 250 GHz source“; project budget: 82000 EUR

Microwaves electronics (Labs)

2022 Domantas Vizbaras, Graphene field effect transistor, broad bandwidth terahertz detector characterization

Participation in the national/international governing bodies, commissions, committees, boards etc.

2019-2022 NATO Science & Technology Organization, Terahertz-band Communications and Networking IST-181 panel member

2022 Lithuanian Academy of Sciences, Kazimieras Baršauskas Prize in electronics and electrical engineering for scientific work ‘Terahertz electronics: application of plasma waves to the operation of semiconductor devices above the cutoff frequencies’ (together with prof. A. Lisauskas) 2021 Best Paper Award of the IEEE Microwave Theory and Techniques Society for the contribution “A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna,” IEEE Transactions on Terahertz Science and Technology, vol. 9, no. 4, pp. 430–444, Jul. 2019, doi: 10.1109/TTHZ.2019.2917782

2020-2022: wrote or contributed to articles promoting high-frequency electronics for the Delfi and Lrytas portals, and contributed to four TV reports on the same topic ("IT+/Delfi", "LRytas" in the TV programme "IT and Science", "TV3 Žinios", "LRT Mokslo sriuba")

1. Member of the Lithuanian Physical Society;
2. Published over 300 technology popularization articles in Lithuanian and Baltic media on ITT topics (Veidas magazine, Delfi portal, etc.).
3. Published two educational books.