Dr. Saulius Miasojedovas

Dr. Saulius Miasojedovas

Phone: +370 522 34 496

E-mail: 

Organic and inorganic semiconductors

Senior research fellow

Perovskite, fluorescence, time-resolved luminescence, GaN, deep-UV spectroscopy

https://orcid.org/0000-0001-9758-2868

S. Miasojedovas, P. Ščajev, K. Jarašiūnas, B. Gil, H. Miyake, “Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K,” Phys. Rev. B 102, 035201 (2020).

P. Ščajev, S. Miasojedovas, S. Juršėnas, “A carrier density dependent diffusion coefficient, recombination rate and diffusion length in MAPbI(3)and MAPbBr(3)crystals measured under one- and two-photon excitations,” Journal of Materials Chemistry C 8, 10290-10301 (2020).

P. Ščajev, C. Qin, R. Aleksiejūnas, P. Baronas, S. Miasojedovas, T. Fujihara, T. Matsushima, C. Adachi and S. Juršėnas, “Diffusion Enhancement in Highly Excited MAPbI3 Perovskite Layers with Additives, “ Journal of Physical Chemistry Letters 9, 3167-3172 (2018).

P. Ščajev, R. Aleksiejūnas, S. Miasojedovas, S. Nargėlas, M. Inoue, C. Qin, T. Matsushima, C. Adachi and S. Juršėnas, “Two regimes of carrier diffusion in vapor-deposited lead-halide perovskites,” The Journal of Physical Chemistry C 121 (39), 21600–21609 (2017).

S. Miasojedovas, C. Mauder, S. Krotkus, A. Kadys, T. Malinauskas, K, Jarasiunas, M. Heuken, H. Kalish, A. Vescan, „High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates,“ Journal Crystal Growth, 329, 1, 33-38 (2011).

S. Miasojedovas, S. Juršėnas, A. Žukauskas, V.Yu. Ivanov, M. Godlewski, M. Leszczynski, P. Perlin, T. Suski, „Spontaneous and stimulated emission in quantum structures grown over bulk GaN and sapphire,“ J. Crystal Growth 281, 183-187 (2005).

S. Juršėnas, N. Kurilčik, S. Miasojedovas, G. Kurilčik, A. Žukauskas, T. Suski, P. Perlin, M. Leszczynski, P. Prystawko, and I. Grzegory, “Optical gain in homoepitaxial GaN,” Appl. Phys. Lett. 85, (6) 952-954 (2004).